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PolarHVTM HiPerFET Power MOSFET
Electrically Isolated Tab
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFR 44N80P
VDSS ID25
RDS(on)
trr
= 800 V = 25 A 190 m ns 250
Symbol VDSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL TSOLD VISOL FC Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150C, RG = 10 TC = 25C
Maximum Ratings 800 800 30 40 25 100 25 80 3.4 10 300 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns W C C C C C V~ N/lb g
ISOPLUS247 (IXFR) E153432
Isolated Tab
G = Gate S = Source
D = Drain
Features Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation Low drain to tab capacitance(<30pF) Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Fast intrinsic Rectifier Applications DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Advantages
1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 seconds 50/60 Hz, RMS, 1 minute Mounting force
300 260 2500 20..120 /4.5..25 5
Symbol Test Conditions (TJ = 25C unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 800 A VDS = VGS, ID = 8 mA VGS = 30 V, VDS = 0 V VDS = VDSS VGS = 0 V VGS = 10 V, ID = IT, Note 1 TJ = 125C
Characteristic Values Min. Typ. Max. 800 3.0 5.0 200 50 1.5 200 V V nA A mA m
Easy assembly Space savings High power density
DS99504E(06/06) (c) 2006 IXYS All rights reserved
IXFR 44N80P
Symbol Test Conditions Characteristic Values (TJ = 25C unless otherwise specified) Min. Typ. Max. 27 43 12 VGS = 0 V, VDS = 25 V, f = 1 MHz 910 30 28 VGS = 10 V, VDS = 0.5 VDSS, ID = 44 A RG = 1 (External) 22 75 27 200 VGS= 10 V, VDS = 0.5 VDSS, ID = IT 67 65 S nF pF pF ns ns ns ns nC nC nC 0.42 C/W 0.15 C/W ISOPLUS247 (IXFR) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCS
VDS= 20 V; ID = IT, Note 1
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Repetitive IF = IS, VGS = 0 V, Note 1 IF = 22 A, -di/dt = 100 A/s VR = 100 V, VGS = 0 V
Characteristic Values TJ = 25C unless otherwise specified) Min. Typ. Max. 44 100 1.5 250 0.8 8.0 A A V ns C A
Notes: 1. Pulse test, t 300 s, duty cycle d 2 %;
2. Test current IT = 22 A.
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 7,005,734 B2 6,759,692 6,771,478 B2
IXFR 44N80P
Fig. 1. Output Characte r is tics @ 25 C
45 40 35 V GS = 10V 7V 80 6V 70 100 90 V GS = 10V 7V
Fig. 2. Exte nde d Output Characte ris tics @ 25 C
I D - Amperes
I D - Amperes
30 25 20 15
60 50 40 30 20 10 0 5V 6V
5V 10 5 0 0 1 2 3 4 5 6 7 8
0
3
6
9
12
15
18
21
24
27
30
V D S - V olts Fig. 3. Output Characte r is tics @ 125 C
45 40 35 6V V GS = 10V 7V 2.6 2.4 V GS = 10V
V D S - V olts Fig. 4. RDS(on ) Nor m alize d to ID = 22A V alue vs . Junction Te m pe rature
R D S ( o n ) - Normalized
2.2 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 I D = 22A I D = 44A
I D - Amperes
30 25 20 15 10 5 0 0 2 4 6 8 10 12 14 16 5V
-50
-25
0
25
50
75
100
125
150
V D S - V olts Fig. 5. RDS(on) Nor m alize d to ID = 22A V alue vs . Drain Curr e nt
2.4 2.2 V GS = 10V TJ = 125 C
28 24 20
TJ - Degrees Centigrade
Fig . 6. Dr ain Cur r e n t vs . Cas e Te m p e r atu r e
R D S ( o n ) - Normalized
2 1.8 1.6 1.4 1.2 1 0.8 0 10 20 30 40 50 60 70 80 90 100 TJ = 25 C
I D - Amperes
16 12 8 4 0 -50 -25 0 25 50 75 100 125 150
I D - A mperes
TC - Degrees Centigrade
(c) 2006 IXYS All rights reserved
IXFR 44N80P
Fig. 7. Input Adm ittance
70 60 50 90 80 70 TJ = - 40 C 25C 125C
Fig. 8. Transconductance
g f s - Siemens
I D - Amperes
40 30 20
TJ = 125C 25 C - 40 C
60 50 40 30 20
10 0 3.5 4 4.5 5 5.5 6 6.5
10 0 0 10 20 30 40 50 60 70 80
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
140 120 8 100 7 10 9 VDS = 400V I D = 22A I G = 10mA
I D - Amperes
Fig. 10. Gate Charge
I S - Amperes
VG S - Volts
TJ = 125C TJ = 25C 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3
80 60 40 20 0
6 5 4 3 2 1 0 0 25 50 75 100 125 150 175 200
V S D - Volts
Q G - NanoCoulombs
Fig. 11. Capacitance
100000 f = 1MHz C iss 10000
1.00
Fig. 12. Maximum Transient Thermal Resistance
Capacitance - PicoFarads
C oss 1000
R( t h ) J C - C / W
30 35 40
0.10
100
C rss
10 0 5 10 15 20 25
0.01 0.001 0.01 0.1 1 10
V DS - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Pulse Width - Seconds

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